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NUS5530MNR2G
Descrição:
NUS5530MNR2G datasheet pdf and Transistors - Special Purpose product details from Rochester Electronics stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
NUS5530MNR2G
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NUS5530MNR2G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.54
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Width:
3.3 mm
Length:
3.3 mm
Case/Package:
DFN
Current Rating:
3.9 A
Voltage Rating:
20 V
Element Configuration:
Dual
Max Power Dissipation:
2.5 W
Min Operating Temperature:
-55 °C
Emitter Base Voltage (VEBO):
-5 V
Collector Base Voltage (VCBO):
-55 V
Collector Emitter Voltage (VCEO):
35 V
Products Category:
Discrete Semiconductor - Transistors - Special Purpose
Qty:
8319 In Stock
Applications:
Appliances
Broadband fixed line access
Advanced driver assistance systems (ADAS)
Height:
950 µm
Packaging:
Tape & Reel (TR)
Max Frequency:
100 MHz
Number of Pins:
8
Power Dissipation:
635 mW
Max Collector Current:
2 A
Max Operating Temperature:
150 °C
Drain to Source Resistance:
200 Ω
Gate to Source Voltage (Vgs):
-35 V
Continuous Drain Current (ID):
-3.9 A
Collector Emitter Saturation Voltage:
-100 mV
Número do modelo:
NUS5530MNR2G
Introdução
NUS5530MNR2G Overview\\\\nNUS5530MNR2G is a model belonging to the Transistors - Special Purpose subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NUS5530MNR2G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. NUS5530MNR2G
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