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SI3447BDV-T1-E3
Descrição:
SI3447BDV-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SI3447BDV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI3447BDV-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
990.6 µm
Fall Time:
46 ns
Rise Time:
46 ns
Resistance:
53 mΩ
Termination:
SMD/SMT
Number of Pins:
6
Threshold Voltage:
-1 V
Turn-On Delay Time:
20 ns
Turn-Off Delay Time:
62 ns
Max Power Dissipation:
1.1 W
Max Operating Temperature:
150 °C
Drain to Source Resistance:
40 mΩ
Continuous Drain Current (ID):
4.5 A
Drain to Source Breakdown Voltage:
-12 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
125 In Stock
Applications:
Appliances
Test & measurement
Data storage
Width:
3 mm
Length:
3.0988 mm
Packaging:
Cut Tape
Rds On Max:
40 mΩ
Nominal Vgs:
-1 V
Case/Package:
TSOP
Power Dissipation:
1.1 W
Number of Elements:
1
Dual Supply Voltage:
-12 V
Element Configuration:
Single
Reverse Recovery Time:
40 ns
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
12 V
Número do modelo:
A partir de 1 de janeiro de 2018
Introdução
SI3447BDV-T1-E3 Overview\\nSI3447BDV-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI3447BDV-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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