SI2303BDS-T1-E3
Especificações
Part Number:
SI2303BDS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI2303BDS-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.02 mm
Current:
164 A
Fall Time:
40 ns
Rise Time:
40 ns
Resistance:
200 mΩ
Case/Package:
SOT-23
Input Capacitance:
180 pF
Threshold Voltage:
-3 V
Min Supply Voltage:
13 V
Turn-On Delay Time:
55 ns
Element Configuration:
Single
Max Dual Supply Voltage:
22 V
Max Operating Temperature:
150 °C
Drain to Source Resistance:
200 mΩ
Continuous Drain Current (ID):
1.3 A
Drain to Source Breakdown Voltage:
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
576 In Stock
Applications:
Datacom module
Industrial transport (non-car & non-light truck)
Mobile phones
Width:
1.4 mm
Length:
3.04 mm
Voltage:
30 V
Packaging:
Cut Tape
Rds On Max:
200 mΩ
Nominal Vgs:
-3 V
Number of Pins:
3
Power Dissipation:
700 mW
Max Supply Voltage:
36 V
Number of Elements:
1
Turn-Off Delay Time:
10 ns
Max Power Dissipation:
700 mW
Min Dual Supply Voltage:
7 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
-30 V
Número do modelo:
O número de veículos deve ser indicado.
Introdução
SI2303BDS-T1-E3 Overview\\nSI2303BDS-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI2303BDS-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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