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SUD35N05-26L-E3
Descrição:
SUD35N05-26L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SUD35N05-26L-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SUD35N05-26L-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
2.3876 mm
Fall Time:
100 ns
Rds On Max:
20 mΩ
Nominal Vgs:
1 V
Case/Package:
DPAK
Input Capacitance:
885 pF
Threshold Voltage:
1 V
Turn-On Delay Time:
5 ns
Turn-Off Delay Time:
20 ns
Element Configuration:
Single
Max Operating Temperature:
175 °C
Drain to Source Resistance:
20 mΩ
Continuous Drain Current (ID):
35 A
Drain to Source Breakdown Voltage:
55 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
11 In Stock
Applications:
Building automation
Grid infrastructure
PC & notebooks
Width:
6.223 mm
Length:
6.7056 mm
Rise Time:
18 ns
Resistance:
20 mΩ
Termination:
SMD/SMT
Number of Pins:
3
Power Dissipation:
50 W
Number of Elements:
1
Dual Supply Voltage:
55 V
Voltage Rating (DC):
55 V
Max Power Dissipation:
50 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
55 V
Número do modelo:
SUD35N05-26L-E3
Introdução
SUD35N05-26L-E3 Overview\\nSUD35N05-26L-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SUD35N05-26L-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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