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SIA444DJT-T1-GE3
Descrição:
SIA444DJT-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SIA444DJT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIA444DJT-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
750 µm
Fall Time:
10 ns
Rds On Max:
17 mΩ
Input Capacitance:
560 pF
Threshold Voltage:
1 V
Number of Elements:
1
Turn-Off Delay Time:
15 ns
Max Power Dissipation:
19 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
581 In Stock
Applications:
Aerospace & defense
Factory automation & control
PC & notebooks
Width:
2.05 mm
Length:
2.05 mm
Rise Time:
12 ns
Number of Pins:
6
Power Dissipation:
3.5 W
Number of Channels:
1
Turn-On Delay Time:
12 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
17 mΩ
Continuous Drain Current (ID):
12 A
Número do modelo:
SIA444DJT-T1-GE3
Introdução
SIA444DJT-T1-GE3 Overview\\nSIA444DJT-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIA444DJT-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensiv
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