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SI4410BDY-T1-GE3
Descrição:
SI4410BDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SI4410BDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI4410BDY-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.55 mm
Weight:
186.993455 mg
Rise Time:
10 ns
Case/Package:
SOIC
Contact Plating:
Tin
Threshold Voltage:
1 V
Number of Elements:
1
Turn-Off Delay Time:
40 ns
Max Power Dissipation:
1.4 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
599 In Stock
Applications:
Datacom module
Test & measurement
Home theater & entertainment
Width:
4 mm
Length:
5 mm
Fall Time:
15 ns
Rds On Max:
13.5 mΩ
Number of Pins:
8
Power Dissipation:
1.4 W
Number of Channels:
1
Turn-On Delay Time:
10 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
13.5 mΩ
Continuous Drain Current (ID):
7.5 A
Drain to Source Breakdown Voltage:
30 V
Número do modelo:
SI4410BDY-T1-GE3
Introdução
SI4410BDY-T1-GE3 Overview\\nSI4410BDY-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4410BDY-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensiv
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