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STFI11N65M2
Descrição:
STFI11N65M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
STFI11N65M2
Manufacturer:
STMicroelectronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
STFI11N65M2 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: STMicroelectronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Fall Time:
15 ns
Rds On Max:
670 mΩ
Case/Package:
TO-262-3
Input Capacitance:
410 pF
Number of Channels:
1
Turn-Off Delay Time:
26 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
670 mΩ
Continuous Drain Current (ID):
7 A
Drain to Source Breakdown Voltage:
650 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
306 In Stock
Applications:
Aerospace & defense
Lighting
Data storage
Weight:
2.240009 g
Rise Time:
7.5 ns
Resistance:
600 mΩ
Number of Pins:
3
Threshold Voltage:
3 V
Turn-On Delay Time:
9.5 ns
Max Power Dissipation:
25 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
25 V
Drain to Source Voltage (Vdss):
650 V
Número do modelo:
STFI11N65M2
Introdução
STFI11N65M2 Overview\\nSTFI11N65M2 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STFI11N65M2 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. STFI11N65M
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