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NTUD3170NZT5G
Descrição:
NTUD3170NZT5G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
NTUD3170NZT5G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NTUD3170NZT5G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.49
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width:
850 µm
Length:
1.05 mm
Packaging:
Digi-Reel®
Rds On Max:
1.5 Ω
Schedule B:
8541210080
Number of Pins:
6
Input Capacitance:
12.5 pF
Threshold Voltage:
1 V
Turn-On Delay Time:
16.5 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
2.8 Ω
Continuous Drain Current (ID):
220 mA
Drain to Source Breakdown Voltage:
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
9746 In Stock
Applications:
Broadband fixed line access
Enterprise projectors
Height:
400 µm
Fall Time:
80 ns
Rise Time:
25.5 ns
Resistance:
1.5 Ω
Case/Package:
SOT-963
Contact Plating:
Tin
Power Dissipation:
200 mW
Number of Elements:
2
Turn-Off Delay Time:
142 ns
Max Power Dissipation:
125 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
20 V
Número do modelo:
NTUD3170NZT5G
Introdução
NTUD3170NZT5G Overview\\\\nNTUD3170NZT5G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NTUD3170NZT5G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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