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SI3585CDV-T1-GE3
Descrição:
SI3585CDV-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SI3585CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI3585CDV-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.56
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
19.986414 mg
Rise Time:
10 ns
Resistance:
195 mΩ
Case/Package:
TSOP
Contact Plating:
Tin
Power Dissipation:
1.1 W
Number of Channels:
2
Turn-On Delay Time:
3 ns
Max Power Dissipation:
1.3 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Max Junction Temperature (Tj):
150 °C
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
7525 In Stock
Applications:
Lighting
Connected peripherals & printers
Infotainment & cluster
Height:
1.1 mm
Fall Time:
7 ns
Rds On Max:
58 mΩ
Schedule B:
8541290080
Number of Pins:
6
Input Capacitance:
150 pF
Threshold Voltage:
1.5 V
Number of Elements:
2
Turn-Off Delay Time:
13 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
195 mΩ
Continuous Drain Current (ID):
2.1 A
Drain to Source Voltage (Vdss):
20 V
Número do modelo:
SI3585CDV-T1-GE3
Introdução
SI3585CDV-T1-GE3 Overview\\\\nSI3585CDV-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI3585CDV-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehens
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