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SIA533EDJ-T1-GE3
Descrição:
SIA533EDJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
SIA533EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIA533EDJ-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.63
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
28.009329 mg
Rds On Max:
34 mΩ
Schedule B:
8541290080
Number of Pins:
6
Power Dissipation:
1.9 W
Number of Channels:
2
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
48 mΩ
Continuous Drain Current (ID):
4.5 A
Drain to Source Voltage (Vdss):
12 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
8916 In Stock
Applications:
Power delivery
PC & notebooks
Enterprise projectors
Height:
800 µm
Packaging:
Digi-Reel®
Resistance:
34 MΩ
Nominal Vgs:
400 mV
Input Capacitance:
420 pF
Threshold Voltage:
400 mV
Number of Elements:
2
Max Power Dissipation:
7.8 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
12 V
Número do modelo:
A partir de 1 de janeiro de 2014:
Introdução
SIA533EDJ-T1-GE3 Overview\\\\nSIA533EDJ-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIA533EDJ-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehens
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