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NTJD5121NT1G
Descrição:
NTJD5121NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
NTJD5121NT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NTJD5121NT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.29
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width:
1.35 mm
Length:
2.2 mm
Packaging:
Digi-Reel®
Rds On Max:
1.6 Ω
Nominal Vgs:
1.7 V
Number of Pins:
6
Input Capacitance:
26 pF
Threshold Voltage:
1.7 V
Number of Elements:
2
Turn-Off Delay Time:
34 ns
Max Power Dissipation:
266 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2714 In Stock
Applications:
Wired networking
Mobile phones
Height:
1 mm
Fall Time:
32 ns
Rise Time:
34 ns
Resistance:
1.6 Ω
Case/Package:
SC
Contact Plating:
Tin
Power Dissipation:
250 mW
Number of Channels:
2
Turn-On Delay Time:
22 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
1.2 Ω
Continuous Drain Current (ID):
295 mA
Drain to Source Voltage (Vdss):
60 V
Número do modelo:
NTJD5121NT1G
Introdução
NTJD5121NT1G Overview\\\\nNTJD5121NT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NTJD5121NT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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