NVMFD5C650NLWFT1G
Especificações
Part Number:
NVMFD5C650NLWFT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NVMFD5C650NLWFT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.33
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Height:
1.1 mm
Power Dissipation:
125 W
Turn-On Delay Time:
13 ns
Max Operating Temperature:
175 °C
Drain to Source Resistance:
3.5 mΩ
Continuous Drain Current (ID):
111 A
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
5310 In Stock
Applications:
Tablets
Data storage
Building automation
Schedule B:
8541290080
Number of Channels:
2
Turn-Off Delay Time:
37 ns
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
175 °C
Drain to Source Breakdown Voltage:
60 V
Número do modelo:
NVMFD5C650NLWFT1G
Introdução
NVMFD5C650NLWFT1G Overview\\\\nNVMFD5C650NLWFT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NVMFD5C650NLWFT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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