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AUIRF7313QTR

Descrição:
AUIRF7313QTR datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
AUIRF7313QTR
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
AUIRF7313QTR More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.84
Remark:
Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Mount:
Surface Mount
Height:
1.5 mm
Fall Time:
11 ns
Rise Time:
7.3 ns
Case/Package:
SOIC
Package Quantity:
4000
Power Dissipation:
2.4 W
Number of Channels:
2
Turn-On Delay Time:
3.7 ns
Turn-Off Delay Time:
21 ns
Max Operating Temperature:
175 °C
Drain to Source Resistance:
23 mΩ
Continuous Drain Current (ID):
6.9 A
Drain to Source Voltage (Vdss):
30 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
7896 In Stock
Applications:
Mobile phones Home theater & entertainment Infotainment & cluster
Width:
4 mm
Length:
5 mm
Packaging:
Tape & Reel
Rds On Max:
29 mΩ
Number of Pins:
8
Input Capacitance:
755 pF
Threshold Voltage:
3 V
Number of Elements:
2
On-State Resistance:
29 mΩ
Max Power Dissipation:
2.4 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
175 °C
Drain to Source Breakdown Voltage:
30 V
Número do modelo:
AUIRF7313QTR
Introdução
AUIRF7313QTR Overview\\\\nAUIRF7313QTR is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have AUIRF7313QTR high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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