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HGTP2N120CN
Descrição:
HGTP2N120CN datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
HGTP2N120CN
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HGTP2N120CN More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Current Rating:
13 A
Power Dissipation:
104 W
Element Configuration:
Single
Max Power Dissipation:
104 W
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
1.2 kV
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
432 In Stock
Applications:
Wireless infrastructure
Medical
PC & notebooks
Case/Package:
TO-220-3
Number of Pins:
3
Voltage Rating (DC):
1.2 kV
Max Collector Current:
13 A
Max Operating Temperature:
150 °C
Collector Emitter Voltage (VCEO):
1.2 kV
Collector Emitter Saturation Voltage:
2.05 V
Número do modelo:
HGTP2N120CN
Introdução
HGTP2N120CN Overview\\nHGTP2N120CN is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HGTP2N120CN high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. HGTP2N120CN is
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