english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
HGT1S12N60A4S9A
Descrição:
HGT1S12N60A4S9A datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
HGT1S12N60A4S9A
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HGT1S12N60A4S9A More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Case/Package:
TO-263-3
Power Dissipation:
298 W
Max Breakdown Voltage:
600 V
Max Power Dissipation:
167 W
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
414 In Stock
Applications:
Appliances
Electronic point of sale (EPOS)
Enterprise machine
Weight:
1.31247 g
Number of Pins:
3
Element Configuration:
Single
Max Collector Current:
54 A
Max Operating Temperature:
150 °C
Collector Emitter Voltage (VCEO):
2.7 V
Collector Emitter Saturation Voltage:
2.7 V
Número do modelo:
HGT1S12N60A4S9A
Introdução
HGT1S12N60A4S9A Overview\\nHGT1S12N60A4S9A is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HGT1S12N60A4S9A high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Envie o RFQ
Conservado em estoque:
MOQ: