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HGTG20N60B3D
Descrição:
HGTG20N60B3D datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
HGTG20N60B3D
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HGTG20N60B3D More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$4.12
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Weight:
6.39 g
Rise Time:
20 ns
Case/Package:
TO-247
Number of Pins:
3
Turn-On Delay Time:
25 ns
Voltage Rating (DC):
600 V
Max Breakdown Voltage:
600 V
Max Power Dissipation:
165 W
Max Operating Temperature:
150 °C
Continuous Collector Current:
40 A
Collector Emitter Voltage (VCEO):
600 V
Collector Emitter Saturation Voltage:
1.8 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
7801 In Stock
Applications:
Aerospace & defense
Data storage
Height:
24.75 mm
Polarity:
NPN
Schedule B:
8541290080
Current Rating:
20 A
Power Dissipation:
165 W
Turn-Off Delay Time:
220 ns
Element Configuration:
Single
Max Collector Current:
40 A
Reverse Recovery Time:
55 ns
Min Operating Temperature:
-40 °C
Max Junction Temperature (Tj):
150 °C
Collector Emitter Breakdown Voltage:
600 V
Número do modelo:
HGTG20N60B3D
Introdução
HGTG20N60B3D Overview\\\\nHGTG20N60B3D is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HGTG20N60B3D high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. HGTG20N60B3D
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