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IGB30N60TATMA1
Descrição:
IGB30N60TATMA1 datasheet pdf and Transistors - IGBTs - Single product details from IR (Infineon Technologies) stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
IGB30N60TATMA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IGB30N60TATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.60
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Height:
4.7 mm
Case/Package:
TO-263-3
Package Quantity:
1000
Turn-On Delay Time:
23 ns
Element Configuration:
Single
Max Power Dissipation:
187 W
Min Operating Temperature:
-40 °C
Max Junction Temperature (Tj):
175 °C
Collector Emitter Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
8131 In Stock
Applications:
Test & measurement
Tablets
PC & notebooks
Packaging:
Tape & Reel
Number of Pins:
3
Power Dissipation:
187 W
Turn-Off Delay Time:
254 ns
Max Collector Current:
60 A
Max Operating Temperature:
150 °C
Continuous Collector Current:
45 A
Collector Emitter Voltage (VCEO):
600 V
Collector Emitter Saturation Voltage:
1.5 V
Número do modelo:
IGB30N60TATMA1
Introdução
IGB30N60TATMA1 Overview\\\\nIGB30N60TATMA1 is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IGB30N60TATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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