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HGTG10N120BND
Descrição:
HGTG10N120BND datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
HGTG10N120BND
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HGTG10N120BND More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$3.08
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Height:
20.82 mm
Weight:
6.39 g
Case/Package:
TO-247
Number of Pins:
3
Turn-On Delay Time:
23 ns
Voltage Rating (DC):
1.2 kV
Max Collector Current:
35 A
Reverse Recovery Time:
70 ns
Min Operating Temperature:
-55 °C
Max Junction Temperature (Tj):
150 °C
Collector Emitter Breakdown Voltage:
1.2 kV
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
5171 In Stock
Applications:
Electronic point of sale (EPOS)
Width:
4.82 mm
Length:
15.87 mm
Rise Time:
165 ns
Current Rating:
35 A
Power Dissipation:
298 W
Turn-Off Delay Time:
165 ns
Element Configuration:
Single
Max Power Dissipation:
298 W
Max Operating Temperature:
150 °C
Continuous Collector Current:
35 A
Collector Emitter Voltage (VCEO):
1.2 kV
Collector Emitter Saturation Voltage:
2.45 V
Número do modelo:
HGTG10N120BND
Introdução
HGTG10N120BND Overview\\\\nHGTG10N120BND is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HGTG10N120BND high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. HGTG10N120
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