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BFP520FE6327
Descrição:
BFP520FE6327 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
BFP520FE6327
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFP520FE6327 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.15
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
22.5 dB
hFE Min:
70
Frequency:
45 GHz
Max Frequency:
45 GHz
Power Dissipation:
100 mW
Transition Frequency:
45 GHz
Max Breakdown Voltage:
3.5 V
Max Power Dissipation:
100 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1 V
Collector Emitter Voltage (VCEO):
2.5 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3130 In Stock
Applications:
Aerospace & defense
Tablets
Advanced driver assistance systems (ADAS)
Mount:
Surface Mount
Polarity:
NPN
Case/Package:
SMD/SMT
Current Rating:
40 mA
Voltage Rating (DC):
2.5 V
Element Configuration:
Single
Max Collector Current:
40 mA
Gain Bandwidth Product:
45 GHz
Min Operating Temperature:
-65 °C
Continuous Collector Current:
40 mA
Collector Emitter Breakdown Voltage:
3.5 V
Número do modelo:
BFP520FE6327
Introdução
BFP520FE6327 Overview\\\\nBFP520FE6327 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFP520FE6327 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Envie o RFQ
Conservado em estoque:
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