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MT3S16U(TE85L,F)
Descrição:
MT3S16U(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
MT3S16U(TE85L,F)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
MT3S16U(TE85L,F) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.25
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
hFE Min:
80
Frequency:
4 GHz
Case/Package:
SOT-323
Element Configuration:
Single
Max Collector Current:
60 mA
Max Operating Temperature:
125 °C
Emitter Base Voltage (VEBO):
2 V
Collector Base Voltage (VCBO):
10 V
Collector Emitter Breakdown Voltage:
5 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
7498 In Stock
Applications:
Tablets
Wearables (non-medical)
Factory automation & control
Weight:
6.208546 mg
Polarity:
NPN
Packaging:
Tape & Reel (TR)
Transition Frequency:
4 GHz
Max Breakdown Voltage:
5 V
Max Power Dissipation:
100 mW
Min Operating Temperature:
-55 °C
Continuous Collector Current:
60 mA
Collector Emitter Voltage (VCEO):
5 V
Número do modelo:
MT3S16U(TE85L,F)
Introdução
MT3S16U(TE85L,F) Overview\\\\nMT3S16U(TE85L,F) is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have MT3S16U(TE85L,F) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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