BFP650H6327XTSA1
Especificações
Part Number:
BFP650H6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFP650H6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.52
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain:
21.5 dB
Width:
1.25 mm
Length:
2 mm
Frequency:
41 GHz
Power Gain:
21.5 dB
Noise Figure:
0.8 dB
Number of Pins:
4
Package Quantity:
3000
Number of Elements:
1
Element Configuration:
Single
Max Collector Current:
150 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.2 V
Collector Emitter Voltage (VCEO):
4 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
4852 In Stock
Applications:
Lighting
Wearables (non-medical)
Industrial transport (non-car & non-light truck)
Mount:
Surface Mount
Height:
900 µm
Polarity:
NPN
Packaging:
Tape & Reel
Case/Package:
SOT
Max Frequency:
37 GHz
Contact Plating:
Tin
Power Dissipation:
500 mW
Transition Frequency:
37 GHz
Max Breakdown Voltage:
4.5 V
Max Power Dissipation:
500 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
13 V
Collector Emitter Breakdown Voltage:
4.5 V
Número do modelo:
BFP650H6327XTSA1
Introdução
BFP650H6327XTSA1 Overview\\\\nBFP650H6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFP650H6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensivel
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