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BFS481H6327
Descrição:
BFS481H6327 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
BFS481H6327
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BFS481H6327 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.23
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
20 dB
Width:
1.25 mm
Length:
2 mm
Frequency:
8 GHz
Power Gain:
20 dB
Noise Figure:
0.9 dB
Contact Plating:
Tin
Power Dissipation:
175 mW
Transition Frequency:
8 GHz
Max Collector Current:
20 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
901 In Stock
Applications:
Infotainment & cluster
Body electronics & lighting
Hybrid, electric & powertrain systems
Mount:
Surface Mount
Height:
800 µm
Polarity:
NPN
Packaging:
Tape & Reel
Case/Package:
SOT
Number of Pins:
6
Package Quantity:
3000
Number of Elements:
2
Max Breakdown Voltage:
12 V
Max Power Dissipation:
175 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
Número do modelo:
BFS481H6327
Introdução
BFS481H6327 Overview\\\\nBFS481H6327 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFS481H6327 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BFS481H6327
Envie o RFQ
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