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BCM856SH6327XTSA1
Descrição:
BCM856SH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
BCM856SH6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BCM856SH6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.48
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
800 µm
Polarity:
PNP
Packaging:
Cut Tape (CT)
Max Frequency:
250 MHz
Contact Plating:
Tin
Power Dissipation:
250 mW
Transition Frequency:
250 MHz
Max Collector Current:
2 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Base Voltage (VCBO):
80 V
Collector Emitter Breakdown Voltage:
65 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
136 In Stock
Applications:
Mobile phones
Gaming
Hybrid, electric & powertrain systems
Width:
1.25 mm
Length:
2 mm
Frequency:
250 MHz
Case/Package:
SOT
Number of Pins:
6
Package Quantity:
3000
Number of Elements:
2
Max Breakdown Voltage:
65 V
Max Power Dissipation:
250 mW
Min Operating Temperature:
-65 °C
Continuous Collector Current:
100 mA
Collector Emitter Voltage (VCEO):
5 V
Collector Emitter Saturation Voltage:
650 mV
Número do modelo:
BCM856SH6327XTSA1
Introdução
BCM856SH6327XTSA1 Overview\\\\nBCM856SH6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BCM856SH6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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