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NCV1413BDR2G
Descrição:
NCV1413BDR2G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Categoria:
Semicondutor discreto
Especificações
Part Number:
NCV1413BDR2G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NCV1413BDR2G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.67
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.5 mm
Weight:
665.986997 mg
Polarity:
NPN
Current Rating:
500 mA
Output Current:
50 µA
Contact Plating:
Tin
Number of Elements:
7
Max Collector Current:
500 mA
Min Operating Temperature:
-40 °C
Ambient Temperature Range High:
125 °C
Collector Emitter Saturation Voltage:
1.1 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
481 In Stock
Applications:
Lighting
Data storage
Wireless infrastructure
Width:
4 mm
Length:
10 mm
hFE Min:
1000
Case/Package:
SOIC
Number of Pins:
16
Output Voltage:
50 V
Number of Channels:
7
Voltage Rating (DC):
50 V
Max Operating Temperature:
125 °C
Max Junction Temperature (Tj):
150 °C
Collector Emitter Voltage (VCEO):
50 V
Número do modelo:
NCV1413BDR2G
Introdução
NCV1413BDR2G Overview\\\\nNCV1413BDR2G is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NCV1413BDR2G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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